617A View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
617A Datasheet PDF : 3 Pages
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Characteristics (TA=25°C)
Description
Emitter (IR GaAs)
Forward Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector (Si Phototransistor)
Symbol
VF
IR
C0
RthJA
1.25 (≤1.65)
0.01 (≤10)
13
750
Unit
Condition
V
IF=60 mA
µA
VR=6.0 V
pF
VR=0 V, f=1.0 MHz
K/W
Capacitance
Thermal Resistance
Package
Collector-Emitter Saturation Voltage
Coupling Capacitance
CCE
RthJA
VCEsat
CC
5.2
500
0.25 (≤0.4)
0.4
pF
VCE=5 V, f=1.0 MHz
K/W
V
IF=10 mA, IC=2.5 mA
pF
Current Transfer Ratio (IC/IF at VCE=5.0 V) and Collector-Emitter Leakage Current by Dash Number
Description
-1
-2
-3
-4
IC/IF (IF=10 mA)
IC/IF (IF=1.0 mA)
Collector-Emitter Leakage Current, ICEO
VCE=10 V
40–80
30 (>13)
2.0 (≤50)
63–125
45 (>22)
2.0 (≤50)
100–200
70 (>34)
5.0 (≤100)
160–320
%
90 (>56)
5.0 (≤100)
nA
Figure 1. Switching Times (Typical)
Linear Operation (without saturation)
IF
47 Ω
RL=75 Ω
IC
VCC=5 V
Figure 2. Switching Operation
(with saturation)
IF
47 Ω
1.0 kΩ
VCC=5.0 V
IF=10 mA, VCC=5.0 V, TA=25°C
Load Resistance
RL
75
Ω
Turn-on Time
tON
3.0
µs
Rise Time
tR
2.0
Turn-off Time
tOFF
2.3
Fall Time
tF
2.0
Cut-off Frequency
FCO
250
kHz
Parameter
Sym.
Dash No.
-1
-2 and -3 -4
IF=20 mA IF=10 mA IF=5.0 mA
Unit
Turn-on Time tON
3.0
4.2
6.0
µs
Rise Time
tR
2.0
3.0
4.6
Turn-off Time tOFF 18
23
25
Fall Time
tF
11
14
15
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–229
SFH610/17A
March 27, 2000-00
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