P0102 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
P0102 Datasheet PDF : 11 Pages
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P010xx
Characteristics
Figure 5. Average and DC on-state current
vs. case temperature P010xxL
Figure 6.
Relative variation of thermal
impedance junction to ambient
vs. pulse duration
IT(AV)(A)
0.30
0.25
D.C.
0.20
α = 180°
0.15
0.10
0.05
Tcase(°C)
0.00
0
25
50
75
100
125
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
SOT23-3L
SOT-223
TO-92
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Figure 7.
Relative variation of gate trigger,
holding, and latching currents
vs. junction temperature
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
6
5
4
3
IGT
2
1
IH & IL
RGK = 1kΩ
Tj(°C)
0
-40
-20
0
20
40
60
Typical values
80 100 120 140
Figure 8. Relative variation of holding
current vs. gate-cathode resistance
IH[RGK] / IH[RGK=1kΩ]
20
18
16
14
12
10
Typical values
8
6
4
2
0
1E-2
RGK(kΩ)
1E-1
1E+0
Tj = 25°C
1E+1
Figure 9. Relative variation of dV/dt immunity Figure 10. Relative variation of dV/dt immunity
vs. gate-cathode resistance
vs. gate-cathode capacitance
dV/dt[RGK] / dV/dt[RGK=1kΩ]
10.0
Tj = 125°C
VD = 0.67 x VDRM
dV/dt[CGK] / dV/dt[RGK=1kΩ]
10
VD = 0.67 x VDRM
Tj = 125°C
RGK = 1kΩ
8
Typical values
1.0
0.1
0
RGK(kΩ)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
6
4
Typical values
2
CGK(nF)
0
0
1
2
3
4
5
6
7
5/11
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