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NX25F011B View Datasheet(PDF) - Unspecified

Part NameDescriptionManufacturer
NX25F011B 1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE ETC1
Unspecified 
NX25F011B Datasheet PDF : 37 Pages
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NX25F011B
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NX25F041B
Read Device Information Sector (15H)
The Read Device Information command provides access
to a read-only sector that can be used to electronically
identify the NexFlash Serial Flash device being inter-
faced to. Information available includes: part number,
density, voltage, temperature range, package type, and
any special options. This can be extremely useful for
systems that need to accommodate optional densities
(e.g., both 1M-bit or 2M-bit). In this case the firmware can
interrogate the Device Information Sector and
determine the density. The Device Information Sector
also includes a list of any restricted sectors that might
exist in the device. Contact NexFlash for more detailed
information on the Device Information Sector format.
Read Device
Info. Sector
Command 16 Clocks
SI
15H
0000H
Byte
Address*
B[15:0]
16 Clocks
0000H
SO
*The byte address only uses bits [8:0]
RB[15:0]
Read/Busy
Status
First Byte - Last Byte
Read Sector Data
SPECIAL SECTOR COMMANDS
Erase Sector (F1H)
The Erase Sector command (F1H) will erase a sector to an
all 1sstate, during this time the array will be "busy." This
command can be used in conjunction with the Write only to
Sector through SRAM command (F2H) to achieve faster
program performance in applications that can accommo-
date pre-erase. (see TEO in AC Characteristics for
erase timing).
Erase
Sector
Command
SI
F1H
Sector
Address*
S[15:0]
16
Clocks
0000H
Transfer Time
(tEO)
SO
*The sector address only uses bits [8:0], [9:0] or [10:0]
Depending on device density
24
NexFlash Technologies, Inc.
PRELIMINARY NXSF016F-1201
12/12/01 ©
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