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MX29F400BTA-12 查看數據表(PDF) - Macronix International

零件编号产品描述 (功能)生产厂家
MX29F400BTA-12 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY MCNIX
Macronix International MCNIX
MX29F400BTA-12 Datasheet PDF : 44 Pages
First Prev 41 42 43 44
MX29F400T/B
REVISION HISTORY
Revision
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Description
Page
To remove "Advanced Information" datasheet marking and
P1
contain information on products in full production.
To correct the typing error on package dimension.
P41
In fact,the physical packages are never changed,just correct the
previously typing error.
To add the description for 100K endurance cycles
P1,P40
To modify timing of sector address loading period while
P9
operating multi-sector erase from 80uS to 30uS
To modify tBAL from 80uS to 100uS
P20,P21
1.Program/erase cycle times:10K cycles-->100K cycles
P1,34
2.To add data retention minimum 20 years
P1,34
3.To remove A9 from "timing waveform for sector protection for P34
system without 12V"
To remove A9 from "timing waveform for chip unprotection for P35
system without 12V"
Add erase suspend ready max. 100us in ERASE SUSPEND's P10
section at page10
To modify "Package Information"
P41~42
Add automotive grade
P16-20,40
Date
JUL/01/1999
SEP/01/1999
SEP/17/1999
DEC/20/1999
MAY/29/2000
JUN/12/2001
NOV/12/2001
P/N:PM0439
REV. 1.6, NOV. 12, 2001
43
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