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MX29F400BTA-12 查看數據表(PDF) - Macronix International

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MX29F400BTA-12 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY MCNIX
Macronix International MCNIX
MX29F400BTA-12 Datasheet PDF : 44 Pages
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MX29F400T/B
AC CHARACTERISTICS TA = 0oC to 70oC, -40oC to 125oC, VCC = 5V ± 10%
Symbol
tOES
tCWC
tCEP
tCEPH1
tCEPH2
tAS
tAH
tDS
tDH
tCESC
tDF
tAETC
tAETB
tAVT
tBAL
tCH
tCS
tVLHT
tOESP
tWPP1
tWPP2
PARAMETER
OE setup time
Command programming cycle
WE programming pulse width
WE programming pluse width High
WE programming pluse width High
Address setup time
Address hold time
Data setup time
Data hold time
CE setup time before command write
Output disable time (Note 1)
Total erase time in auto chip erase
Total erase time in auto sector erase
Total programming time in auto verify
(byte/ word program time)
Sector address load time
CE Hold Time
CE setup to WE going low
Voltge Transition Time
OE Setup Time to WE Active
Write pulse width for sector protect
Write pulse width for sector unprotect
29F400T/B-90
MIN.
MAX.
50
90
45
20
20
0
45
45
0
0
30
4(TYP.) 32
1.3(TYP.) 10.4
7/12(TYP.) 210/360
100
0
0
4
4
10
12
29F400T/B-120
MIN.
MAX.
Unit
50
ns
120
ns
45
ns
20
ns
20
ns
0
ns
50
ns
50
ns
0
ns
0
ns
30
ns
4(TYP.) 32
s
1.3(TYP.) 10.4
s
7/12(TYP.) 210/360 us
100
us
0
ns
0
ns
4
us
4
us
10
us
12
ms
NOTES:
1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven.
2. Under condition of VCC=5V± 10%, CL=50pF,VIH/VIL=3.0V/0V,VOH/VOL=1.5V/1.5V,IOL=2mA,IOH=-2mA.
P/N:PM0439
REV. 1.6, NOV. 12, 2001
21
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