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MX29F400BTA-12 查看數據表(PDF) - Macronix International

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MX29F400BTA-12 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY MCNIX
Macronix International MCNIX
MX29F400BTA-12 Datasheet PDF : 44 Pages
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MX29F400T/B
CAPACITANCE TA = 25oC, f = 1.0 MHz
SYMBOL PARAMETER
MIN.
TYP
MAX.
UNIT
CIN1
Input Capacitance
8
pF
CIN2
Control Pin Capacitance
12
pF
COUT
Output Capacitance
12
pF
CONDITIONS
VIN = 0V
VIN = 0V
VOUT = 0V
READ OPERATION
DC CHARACTERISTICS TA = 0oC to 70oC, -40oC to 125oC, VCC = 5V ±10%
SYMBOL PARAMETER
MIN.
TYP MAX.
ILI
Input Leakage Current
1
ILO
Output Leakage Current
10
ISB1
Standby VCC current
1
ISB2
1(Note3) 5(Note3)
ICC1
Operating VCC current
40
ICC2
50
VIL
Input Low Voltage
-0.3(NOTE 1)
0.8
VIH
Input High Voltage(NOTE 2) 2.0
VCC + 0.3
VOL
Output Low Voltage
0.45
VOH1 Output High Voltage(TTL) 2.4
VOH2 Output High Voltage(CMOS) VCC-0.4
UNIT
uA
uA
mA
uA
mA
mA
V
V
V
V
V
NOTES:
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3. ISB2 20uA max. for Automotive grade.
CONDITIONS
VIN = GND to VCC
VOUT = GND to VCC
CE = VIH
CE = VCC ± 0.3V
IOUT = 0mA, f=5MHz
IOUT= 0mA, f=10MHz
IOL = 2.1mA
IOH = -2mA
IOH = -100uA,VCC=VCC MIN
P/N:PM0439
REV. 1.6, NOV. 12, 2001
17
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