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MSAGX60F60A View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
Manufacturer
MSAGX60F60A
Microsemi
Microsemi Corporation Microsemi
MSAGX60F60A Datasheet PDF : 0 Pages
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAGX60F60A
MSAHX60F60A
Features
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: MSAH(G)60F60B
high frequency IGBT, low switching losses
anti-parallel FREDiode (MSAHX60F60A only)
600 Volts
60 Amps
2.9 Volts vce(sat)
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ 25°C
Collector-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
90°C
Tj= 25°C
Tj=
Peak Collector Current, pulse width limited by Tjmax,
Safe Operating Area (RBSOA) @ VGE= 15V, L= 100µH (clamped inductive
load), RG= 4.7, Tj= 125°C, VCE= 0.8 x VCES
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, MSAHX60F60A only)
Pulse Source Current (Body Diode, MSAHX60F60A only)
Thermal Resistance, Junction to Case
BVCES
BVCGR
VGES
VGEM
IC25
IC90
ICM
Imax
PD
Tj
Tstg
IS
ISM
θJC
Mechanical Outline
MAX.
600
600
+/-20
+/-30
60
32
120
64
300
-55 to +150
-55 to +150
32
100
0.4
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
Watts
°C
°C
Amps
Amps
°C/W
COLLECTOR
EMITTER
(MS…A)
GATE (MS…B)
.A)
EMITTER (MS…B)
Datasheet# MSC0298A
 

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