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1N5229B View Datasheet(PDF) - Philips Electronics

Part NameDescriptionManufacturer
1N5229B Voltage regulator diodes Philips
Philips Electronics Philips
1N5229B Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Voltage regulator diodes
Product specification
1N5225B to 1N5267B
FEATURES
Total power dissipation:
max. 500 mW
Tolerance series: ±5%
Working voltage range:
nom. 3.0 to 75 V
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
Low-power voltage stabilizers or
voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The series consists of 43 types with nominal working voltages from 3.0 to 75 V.
handbook, halfpage k
a
MAM239
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
IF
continuous forward current
IZSM
non-repetitive peak reverse current
Ptot
total power dissipation
PZSM
non-repetitive peak reverse power
dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
Tamb = 50 °C; lead length max.;
note 1
Lead length 8 mm; note 2
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.3
tp = 8.3 ms; square wave;
Tj 55 °C prior to surge
Notes
1. Device mounted on a printed circuit-board without metallization pad.
2. Tie-point temperature 75 °C.
MIN. MAX.
250
see Table
“Per type”
400
UNIT
mA
mW
500 mW
40 W
10 W
65
+200 °C
65
+200 °C
ELECTRICAL CHARACTERISTICS
Table 1
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
CONDITIONS
IF = 200 mA; see Fig.4
MAX.
1.1
UNIT
V
1996 Apr 26
2
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