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MMBTH10-4LT1 Ver la hoja de datos (PDF) - ON Semiconductor

Número de piezacomponentes DescripciónFabricante
MMBTH10-4LT1 NPN Silicon VHF/UHF Transistor ONSEMI
ON Semiconductor ONSEMI
MMBTH10-4LT1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MMBTH10LT1,
MMBTH10-4LT1
Preferred Devices
VHF/UHF Transistor
NPN Silicon
Device Marking: 3EM
Device Marking:
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
Characteristic
Symbol
Total Device Dissipation
PD
FR–5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (1)
RθJA
Total Device Dissipation
PD
Alumina Substrate (2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (2)
RθJA
Junction and Storage
Temperature Range
TJ, Tstg
(1) FR–5 = 1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Value
Unit
25
Vdc
30
Vdc
3.0
Vdc
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
°C/W
–55 to
°C
+150
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
CASE 318
SOT–23
STYLE 6
ORDERING INFORMATION
Device
Package
Shipping
MMBTH10LT1
SOT–23 3000/Tape & Reel
MMBTH10–4LT1 SOT–23 3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
June, 2000 – Rev. 1
Publication Order Number:
MMBTH10LT1/D
Direct download click here

 

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