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AM29F016B-150E4EB View Datasheet(PDF) - Advanced Micro Devices

Part Name
Description
Manufacturer
AM29F016B-150E4EB Datasheet PDF : 38 Pages
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PRELIMINARY
Am29F016B
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s 5.0 V ± 10%, single power supply operation
— Minimizes system level power requirements
s Manufactured on 0.35 µm process technology
— Compatible with 0.5 µm Am29F016 device
s High performance
— Access times as fast as 70 ns
s Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— 1 µA typical standby current (standard access
time to active mode)
s Flexible sector architecture
— 32 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
s Minimum 1,000,000 program/erase cycles per
sector guaranteed
s Package options
— 48-pin and 40-pin TSOP
— 44-pin SO
s Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
s Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
s Ready/Busy# output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
s Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
s Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
Publication# 21444 Rev: B Amendment/+2
Issue Date: April 1998
 

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