AM29LV017B-80RFIB View Datasheet(PDF) - Advanced Micro Devices

Part Name

Description

Manufacturer

AM29LV017B-80RFIB

16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

Advanced Micro Devices 

PRELIMINARY

AC CHARACTERISTICS

tRC

Addresses

VA

CE#

tACC

tCE

tCH

tOE

OE#

WE#

tOEH

DQ7

tDF

tOH

Complement

VA

Complement True

VA

Valid Data

High Z

DQ0–DQ6

tBUSY

Status Data

Status Data True

Valid Data

High Z

RY/BY#

Note: VA = Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle.

21415C-20

Figure 17. Data# Polling Timings (During Embedded Algorithms)

Addresses

CE#

OE#

WE#

DQ6/DQ2

RY/BY#

tRC

VA

tACC

tCE

tCH

tOE

tOEH

tDF

High Z

tBUSY

tOH

Valid Status

(first read)

VA

Valid Status

(second read)

VA

VA

Valid Status

(stops toggling)

Valid Data

Note: VA = Valid address; not required for DQ6. Figure shows first two status cycle after command sequence, last status read cycle, and

array data read cycle.

21415C-21

Figure 18. Toggle Bit Timings (During Embedded Algorithms)

WE#

Enter

Embedded

Erasing

Erase

Suspend

Enter Erase

Suspend Program

Erase

Erase Suspend

Read

Erase

Suspend

Program

Erase

Resume

Erase Suspend

Read

Erase

DQ6

Erase

Complete

DQ2

Note: The system can use OE# or CE# to toggle DQ2/DQ6. DQ2 toggles only when read at an address within an erase-suspended

sector.

21415C-22

Figure 19. DQ2 vs. DQ6

Am29LV017B

32

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