AM29F160BB-120WCCB View Datasheet(PDF) - Advanced Micro Devices

Part Name

Description

Manufacturer

AM29F160BB-120WCCB

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

PRELIMINARY

Writing Commands/Command Sequences

To write a command or command sequence (which in-

cludes programming data to the device and erasing

sectors of memory), the system must drive WE# and

CE# to VIL, and OE# to VIH.

For program operations, the BYTE# pin determines

whether the device accepts program data in bytes

or words. Refer to “Word/Byte Configuration” for

more information.

The device features an Unlock Bypass mode to facili-

tate faster programming. Once the device enters the Un-

lock Bypass mode, only two write cycles are required to

program a word or byte, instead of four. The “Word/Byte

Program Command Sequence” section has details on

programming data to the device using both standard and

Unlock Bypass command sequences.

An erase operation can erase one sector, multiple sec-

tors, or the entire device. Tables 2 and 3 indicate the

address space that each sector occupies. A “sector ad-

dress” consists of the address bits required to uniquely

select a sector. The “Command Definitions” section

has details on erasing a sector or the entire chip, or

suspending/resuming the erase operation.

After the system writes the autoselect command se-

quence, the device enters the autoselect mode. The

system can then read autoselect codes from the inter-

nal register (which is separate from the memory array)

on DQ7–DQ0. Standard read cycle timings apply in this

mode. Refer to the “Autoselect Mode” and “Autoselect

Command Sequence” sections for more information.

ICC2 in the DC Characteristics table represents the ac-

tive current specification for the write mode. The “AC

Characteristics” section contains timing specification

tables and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system may

check the status of the operation by reading the status

bits on DQ7–DQ0. Standard read cycle timings and ICC

read specifications apply. Refer to “Write Operation

Status” for more information, and to “AC Characteris-

tics” for timing diagrams.

Standby Mode

When the system is not reading or writing to the device,

it can place the device in the standby mode. In this

mode, current consumption is greatly reduced, and the

outputs are placed in the high impedance state, inde-

pendent of the OE# input.

The device enters the CMOS standby mode when the

CE# and RESET# pins are both held at VCC ± 0.3 V.

(Note that this is a more restricted voltage range than

VIH.) If CE# and RESET# are held at VIH, but not within

VCC ± 0.3 V, the device will be in the standby mode, but

the standby current will be greater. The device requires

standard access time (tCE) for read access when the

device is in either of these standby modes, before it is

ready to read data.

If the device is deselected during erasure or program-

ming, the device draws active current until the

operation is completed.

In the DC Characteristics table, ICC3 and ICC4 repre-

sents the standby current specification.

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device

energy consumption. The device automatically

enables this mode when addresses remain stable for

tACC + 30 ns. The automatic sleep mode is

independent of the CE#, WE#, and OE# control

signals. Standard address access timings provide new

data when addresses are changed. While in sleep

mode, output data is latched and always available to

the system. ICC4 in the DC Characteristics table

represents the automatic sleep mode current

specification.

Am29LV160B

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