AM29F160BT-90SEB View Datasheet(PDF) - Advanced Micro Devices

Part Name

Description

Manufacturer

AM29F160BT-90SEB

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

PRELIMINARY

REVISION SUMMARY FOR AM29LV160B

Revision F

Distinctive Characteristics

Changed typical read and program/erase current spec-

ifications.

Device now has a guaranteed minimum endurance of

1,000,000 write cycles.

Figure 1, In-System Sector Protect/Unprotect

Algorithm

Corrected A6 to 0, Changed wait specification to 150

µs on sector protect and 15 ms on sector unprotect.

DC Characteristics

Changed typical read and program/erase current spec-

ifications.

AC Characteristics

Alternate CE# Controlled Erase/Program Operations:

Changed tCP to 35 ns for 70R, 80, and 90 speed

options.

Erase and Programming Performance

Device now has a guaranteed minimum endurance of

1,000,000 write cycles.

Physical Dimensions

Corrected dimensions for package length and width in

FBGA illustration (standalone data sheet version).

Revision F+1

Table 9, Command Definitions

Corrected the byte-mode address in the sixth write

cycle of the chip erase command sequence to AAAh.

Revision F+2

Figure 1, In-System Sector Protect/Unprotect

Algorithms

In the sector protect algorithm, added a “Reset

PLSCNT=1” box in the path from “Protect another sec-

tor?” back to setting up the next sector address.

DC Characteristics

Changed ICC1 test conditions and Note 1 to indicate

that OE# is at VIH for the listed current.

AC Characteristics

Erase/Program Operations; Alternate CE# Controlled

Erase/Program Operations: Corrected the notes refer-

ence for tWHWH1 and tWHWH2. These parameters are

100% tested. Corrected the note reference for tVCS.

This parameter is not 100% tested.

Temporary Sector Unprotect Table

Added note reference for tVIDR. This parameter is not

100% tested.

Figure 23, Sector Protect/Unprotect Timing

Diagram

A valid address is not required for the first write cycle;

only the data 60h.

Erase and Programming Performance

In Note 2, the worst case endurance is now 1 million cy-

cles.

Trademarks

Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

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Am29LV160B

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