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M28W160BT100N1T View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
M28W160BT100N1T 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory ST-Microelectronics
STMicroelectronics ST-Microelectronics
M28W160BT100N1T Datasheet PDF : 45 Pages
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M28W160BT, M28W160BB
Table 27. Device Geometry Definition
Offset Word
Mode
Data
Description
27h
0015h Device Size = 2n in number of bytes
28h
29h
0001h
0000h
Flash Device Interface Code description
2Ah
2Bh
0002h
0000h
Maximum number of bytes in multi-byte program or page = 2n
2Ch
0002h Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
2Dh
001Eh Region 1 Information
2Eh
0000h Number of identical-size erase block = 001Eh+1
2Fh
0000h Region 1 Information
30h
0001h Block size in Region 1 = 0100h * 256 byte
31h
0007h Region 2 Information
32h
0000h Number of identical-size erase block = 0007h+1
33h
0020h Region 2 Information
34h
0000h Block size in Region 2 = 0020h * 256 byte
2Dh
0007h Region 1 Information
2Eh
0000h Number of identical-size erase block = 0007h+1
2Fh
0020h Region 1 Information
30h
0000h Block size in Region 1 = 0020h * 256 byte
31h
001Eh Region 2 Information
32h
0000h Number of identical-size erase block = 001Eh+1
33h
0000h Region 2 Information
34h
0001h Block size in Region 2 = 0100h * 256 byte
Value
2MByte
x16
Async
4
2
31
64KByte
8
8KByte
8
8KByte
31
64KByte
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