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M28W160BT100N1T View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
M28W160BT100N1T 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory ST-Microelectronics
STMicroelectronics ST-Microelectronics
M28W160BT100N1T Datasheet PDF : 45 Pages
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M28W160BT, M28W160BB
Table 26. CFI Query System Interface Information
Offset
Data
Description
VDD Logic Supply Minimum Program/Erase or Write voltage
1Bh
0027h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VDD Logic Supply Maximum Program/Erase or Write voltage
1Ch
0036h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh
00B4h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh
00C6h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
1Fh
0004h Typical timeout per single word program = 2n µs
20h
0004h Typical timeout for Double Word Program = 2n µs
21h
000Ah Typical timeout per individual block erase = 2n ms
22h
0000h Typical timeout for full chip erase = 2n ms
23h
0005h Maximum timeout for word program = 2n times typical
24h
0005h Maximum timeout for Double Word Program = 2n times typical
25h
0003h Maximum timeout per individual block erase = 2n times typical
26h
0000h Maximum timeout for chip erase = 2n times typical
Value
2.7V
3.6V
11.4V
12.6V
16µs
16µs
1s
NA
512µs
512µs
8s
NA
36/45
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