M28W160BT100N1T View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M28W160BT100N1T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M28W160BT, M28W160BB

Table 6. Program, Erase Times and Program/Erase Endurance Cycles

Parameter

Test Conditions

M28W160B

Min

Typ

Max

Word Program

VPP = VDD

10

200

Double Word Program

VPP = 12V ±5%

10

200

Main Block Program

VPP = 12V ±5%

VPP = VDD

0.16

5

0.32

5

Parameter Block Program

VPP = 12V ±5%

VPP = VDD

0.02

4

0.04

4

Main Block Erase

VPP = 12V ±5%

VPP = VDD

1

10

1

10

Parameter Block Erase

VPP = 12V ±5%

VPP = VDD

0.8

10

0.8

10

Program/Erase Cycles (per Block)

100,000

Unit

µs

µs

s

s

s

s

s

s

s

s

cycles

15/45

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