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M464S3254DTS-C1L View Datasheet(PDF) - Samsung

Part Name
Description
Manufacturer
M464S3254DTS-C1L Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
M464S3254DTS
PC133/PC100 SODIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Symbol
Test Condition
Burst length = 1
ICC1 tRC tRC(min)
IO = 0 mA
Version
Unit Note
-7C -7A -1H -1L
560 520 520 520 mA 1
Precharge standby cur-
rent in power-down mode
ICC2P
ICC2PS
CKE VIL(max), tCC = 10ns
CKE & CLK VIL(max), tCC =
16
mA
16
Precharge standby cur-
ICC2N
CKE VIH(min), CS VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
160
rent in non power-down
mA
mode
ICC2NS
CKE VIH(min), CLK VIL(max), tCC =
Input signals are stable
80
Active standby current in
power-down mode
ICC3P
ICC3PS
CKE VIL(max), tCC = 10ns
CKE & CLK VIL(max), tCC =
48
mA
48
Active standby current in
ICC3N
CKE VIH(min), CS VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
240
mA
non power-down mode
(One bank active)
ICC3NS CKE VIH(min), CLK VIL(max), tCC =
Input signals are stable
200
mA
Operating current
(Burst mode)
Refresh current
Self refresh current
IO = 0 mA
ICC4 Page burst
4banks Activated.
tCCD = 2CLKs
ICC5 tRC tRC(min)
ICC6 CKE 0.2V
680 680 640 640 mA 1
1000 920 880 880 mA 2
C
24
mA
L
12
mA
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).
Rev. 0.0 Jan. 2002
 

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