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M464S3254DTS-L7C View Datasheet(PDF) - Samsung

Part Name
Description
Manufacturer
M464S3254DTS-L7C Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
M464S3254DTS
PC133/PC100 SODIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
Unit
-1.0 ~ 4.6
V
-1.0 ~ 4.6
V
-55 ~ +150
°C
8
W
50
mA
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
VDD
3.0
VIH
2.0
VIL
-0.3
VOH
2.4
VOL
-
ILI
-10
3.3
3.6
V
3.0
VDDQ+0.3
V
0
0.8
V
-
-
V
-
0.4
V
-
10
uA
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is 3ns.
3. Any input 0V VIN VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Parameter
Symbol
Min
Input capacitance (A0 ~ A12, BA0 ~ BA1)
CIN1
25
Input capacitance (RAS, CAS, WE)
CIN2
25
Input capacitance (CKE0 ~ CKE1)
CIN3
15
Input capacitance (CLK0 ~ CLK1)
CIN4
15
Input capacitance (CS0 ~ CS1)
CIN5
15
Input capacitance (DQM0 ~ DQM7)
CIN6
10
Data input/output capacitance (DQ0 ~ DQ63)
COUT
13
Max
45
45
25
21
25
12
18
Unit
pF
pF
pF
pF
pF
pF
pF
Rev. 0.0 Jan. 2002
 

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