DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

M41T00SC64MY6E View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M41T00SC64MY6E
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M41T00SC64MY6E Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Maximum rating
5
Maximum rating
M41T00SC64
Stressing the device above the rating listed in the “absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality documents.
Caution:
Table 3. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TA
TSTG
TSLD(1)
VIO
VCC
IO
PD
Ambient operating temperature
Storage temperature (VCC off, oscillator off)
Lead solder temperature for 10 seconds
Input or output voltages
Supply voltage
Output current
Power dissipation
–40 to 85
°C
–55 to 125
°C
240
°C
–0.3 to 6.5
V
–0.3 to 6.5
V
20
mA
0.25
W
1. For SOX18 package, Lead-free (Pb-free) lead finish: Reflow at peak temperature of 240°C (total thermal
budget not to exceed 180°C for between 90 to 150 seconds). No direct exposure to infrared (IR) reflow, or
IR preheat allowed, to avoid damaging the embedded 32KHz crystal.
Negative undershoots below –0.3V are not allowed on any pin while in the battery back-up
mode.
10/19
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]