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KSE803 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
KSE803 NPN Epitaxial Silicon Darlington Transistor Fairchild
Fairchild Semiconductor Fairchild
KSE803 Datasheet PDF : 4 Pages
1 2 3 4
Typical Characteristics
5
4
IB= 450µA
IB= 400µA
IB= 350µA
3
2
1
IB= 500µA
IB= 300µA
IB= 250µA
IB= 200µA
IB= 150µA
IB= 100µA
IB= 50µA
0
0
1
2
3
4
5
VCE(V),COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
100
IC = 500 IB
10
VBE(sat)
1
VCE(sat)
0.1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
10
D.C.
5ms1ms
100µs
1
KSE800/801
KSE802/803
0.1
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
10000
1000
VCE = 3V
100
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
1000
100
f=0.1MHZ
IE=0
10
1
0.01
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A3, June 2001
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