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62256 Просмотр технического описания (PDF) - Samsung

Номер в каталогеКомпоненты Описаниепроизводитель
62256 32Kx8 bit Low Power CMOS Static RAM Samsung
Samsung Samsung
62256 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
KM62256C Family
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE (1()Address Controlled)
( CS=OE=VIL, WE=VIH)
Address
Data Out
tRC
tAA
tOH
Previous Data Valid
PRELIMINARY
CMOS SRAM
Data Valid
TIMING WAVEFORM OF READ CYCLE(2()WE=VIH)
Address
CS
OE
Data out
High-Z
tRC
tAA
tCO
tOE
tOLZ
tLZ
tOH
tHZ
tOHZ
Data Valid
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition, tHZ(max.) is less than tLZ(min.) both for a given device and from device to device.
Revision 3.0
April 1996
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