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62256 Просмотр технического описания (PDF) - Samsung

Номер в каталогеКомпоненты Описаниепроизводитель
62256 32Kx8 bit Low Power CMOS Static RAM Samsung
Samsung Samsung
62256 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
KM62256C Family
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Symbol
VDR
KM62256CL
KM62256CL-L
Data retention current
IDR
KM62256CLE
KM62256CLE-L
KM62256CLI
KM62256CLI-L
Data retention set-up time
tSDR
Recovery time
tRDR
* 1) Commercial Product : Ta=0 to 70¡É, unless otherwise specified
2) Extended Product : TA=-25 to 85¡É, nless otherwise specified
3) Industrial Product : Ta=-40 to 85¡É, unless otherwise specified
** TA=25¡É
PRELIMINARY
CMOS SRAM
Test Condition*
CS¡ÃVcc-0.2V
L-Ver
LL-Ver
Vcc=3.0V
CS¡ÃVcc-0.2V
L-Ver
LL-Ver
L-Ver
LL-Ver
See data retention
waveform
Min Typ** Max Unit
2.0
-
5.5
V
-
1
50
-
0.5
10
-
-
50
§Ë
-
-
25
-
-
50
-
-
25
0
-
-
ms
5
-
-
DATA RETENTION WAVE FORM
1) CS Controlled
VCC
tSDR
Data Retention Mode
tRDR
4.5V
2.2V
VDR
CS
GND
CS¡Ã VCC - 0.2V
FUNCTIONAL DESCRIPTION
CS
WE
OE
H
X
X
L
H
H
L
H
L
L
L
X
* X means don't care
Mode
Power Down
Output Disable
Read
Write
I/O Pin
High-Z
High-Z
Dout
Din
Current Mode
ISB ISB1
ICC
ICC
ICC
Revision 3.0
April 1996
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