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62256 Просмотр технического описания (PDF) - Samsung

Номер в каталогеКомпоненты Описаниепроизводитель
62256 32Kx8 bit Low Power CMOS Static RAM Samsung
Samsung Samsung
62256 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
KM62256C Family
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Symbol
ILI
ILO
Test Conditions*
VIN=Vss to Vcc
CS=VIH or WE=VIL
VIO=Vss to Vcc
Operating power supply current
Average operating current
ICC
CS=VIL, VIN=VIH or VIL, IIO=0mA
Cycle time=1§Á 100% duty
ICC1 CS¡Â 0.2V, VIL¡Â 0.2V
VIN ¡ÃVcc -0.2V, IIO=0mA
ICC2
Min cycle, 100% duty
CS=VIL, IIO=0mA
Output low voltage
Output high voltage
Standby Current(TTL)
VOL
VOH
ISB
IOL=2.1mA
IOH=-1.0mA
CS=VIH
KM62256CL
KM62256CL-L
Standby Current KM62256CLE
(CMOS)
KM62256CLE-L
KM62256CLI
KM62256CLI-L
L(Low Power)
LL(L Low Power)
ISB1
CS ¡ÃVcc-0.2V
VIN¡Ã 0.2V or
VIN ¡ÂVCC-0.2V
L(Low Power)
LL(L Low Power)
L(Low Power)
LL(L Low Power)
* 1) Commercial Product : TA=0 to 70¡É, Vcc=5V¡¾10% unless otherwise specified
2) Extended Product : TA=-25 to 85¡É, Vcc=5V¡¾10% nless otherwise specified
3) Industrial Product : TA=-40 to 85¡É, Vcc=5V¡¾10% unless otherwise specified
** TA=25¡É
*** 20mA for Extended and Industrial Products
****10mA for Extended and Industrial Products
*****2mA for Extended and Industrial Products
PRELIMINARY
CMOS SRAM
Min Typ** Max Unit
-1
-
1
§Ë
-1
-
1
§Ë
-
7
15*** mA
-
-
7**** mA
-
-
-
-
2.4
-
-
-
-
2
-
1
-
-
-
-
-
-
-
-
70
mA
0.4
V
-
V
1***** mA
100
§Ë
20
§Ë
100
§Ë
50
§Ë
100
§Ë
50
§Ë
A.C CHARACTERISTICS
TEST CONDITIONS(1.Test Load and Test Input/Output Reference)*
Item
Value
Remark
Input pulse level
0.8 to 2.4V
-
Input rising & falling time
5ns
-
input and output reference voltage
1.5V
-
Output load (See right)
CL=100pF+1TTL
-
**CL=30pF+1TTL
-
* See DC Operating conditions
** Test load for 45ns commercial products
CL*
* Including scope and jig capacitance
Revision 3.0
April 1996
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