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62256 Просмотр технического описания (PDF) - Samsung

Номер в каталогеКомпоненты Описаниепроизводитель
62256 32Kx8 bit Low Power CMOS Static RAM Samsung
Samsung Samsung
62256 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
KM62256C Family
PRELIMINARY
CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
VIN,VOUT
-0.5 to VCC+0.5
V
-
Voltage on Vcc supply relative to Vss
VCC
-0.5 to 7.0
V
-
Power Dissipation
Storage temperature
Operating Temperature
Soldering temperature and time
PD
TSTG
TA
TSOLDER
1.0
-65 to 150
0 to 70
-25 to 85
-40 to 85
260¡É, 10sec (Lead Only)
W
-
¡É
-
¡É
KM62256CL/L-L
¡É
KM62256CLE/LE-L
¡É
KM62256CLI/LI-L
-
-
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stres s rating only and functional operation of
the device at these or any other conditions above those indicated in the operating section of this specification is not impl ied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS*
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
* 1) Commercial Product : TA=0 to 70¡É, unless otherwise specified
2) Extended Product : TA=-25 to 85¡É, unless otherwise specified
3) Industrial Product : TA=-40 to 85¡É, unless otherwise specified
** TA=25¡É
*** VIL(min)=-3.0V for ¡Â 50ns pulse width
Min
4.5
0
2.2
-0.5***
Typ**
5.0
0
-
-
Max
5.5
0
Vcc+0.5V
0.8
Unit
V
V
V
V
CAPACITANCE* (f=1MHz, TA=25¡É)
Item
Symbol
Test Condition
Min
Input capacitance
CIN
VIN=0V
-
Input/Output capacitance
CIO
VIO=0V
-
* Capacitance is sampled not 100% tested
Max
6
8
Unit
pF
pF
Revision 3.0
April 1996
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