IS62WV102416ALL View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS62WV102416ALL

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

Integrated Silicon Solution 

IS62WV102416ALL

IS62WV102416BLL

IS65WV102416BLL

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

Symbol

Parameter

25 ns

35 ns

Min. Max.

Min. Max.

Unit

tRC

Read Cycle Time

25

—

35

—

ns

tAA

Address Access Time

—

25

—

35

ns

tOHA

Output Hold Time

3

—

3

—

ns

tACS1/tACS2

CS1/CS2 Access Time

—

25

—

35

ns

tDOE

OE Access Time

—

12

—

15

ns

tHZOE(2)

OE to High-Z Output

—

8

—

10

ns

tLZOE(2)

OE to Low-Z Output

5

—

5

—

ns

t t HZCS1/ HZCS2(2) CS1/CS2 to High-Z Output

0

8

0

10

ns

t t LZCS1/ LZCS2(2) CS1/CS2 to Low-Z Output

10

—

10

—

ns

tBA

LB, UB Access Time

—

25

—

35

ns

tHZB

LB, UB to High-Z Output

0

8

0

10

ns

tLZB

LB, UB to Low-Z Output

0

—

0

—

ns

Notes:

1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V/1.5V,inputpulselevelsof0.4toVDD-0.2V/0.4VtoVDD-0.3Vand

output loading specified in Figure 1.

2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.

AC WAVEFORMS

READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE = VIL, CS2 = WE = VIH, UB or LB = VIL)

ADDRESS

DQ0-D15

tRC

tAA

tOHA

PREVIOUS DATA VALID

tOHA

DATA VALID

Integrated Silicon Solution, Inc. — www.issi.com

9

Rev. A

01/18/08

Share Link: