IS62WV102416ALL View Datasheet(PDF) - Integrated Silicon Solution
Part Name
Description
Manufacturer
IS62WV102416ALL Datasheet PDF : 17 Pages
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IS62WV102416ALL
IS62WV102416BLL
IS65WV102416BLL
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
WE CS1 CS2 OE LB UB
XHXXXX
X
X
L
X
X
X
XXXXHH
H
L
H
H
L
X
H
L
H
H
X
L
H
L
H
L
L
H
H
L
H
L
H
L
H
L
H
L
L
L
L
L
HX
L
H
L
L
HX
H
L
L
L
HX
L
L
I/O PIN
I/O0-I/O7 I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
DOUT
High-Z
DOUT
High-Z
DOUT
DOUT
DIN
High-Z
DIN
High-Z
DIN
DIN
VDD Current
ISB1, ISB2
ISB1, ISB2
ISB1, ISB2
ICC
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND –0.5 to VDD + 0.5 V
VDD
VDD Relates to GND
–0.3 to 4.0
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
CI/O
Input/Output Capacitance
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
01/18/08
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