IRLL110PBF View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
IRLL110PBF Datasheet PDF : 8 Pages
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Power MOSFET
IRLL110, SiHLL110
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 5.0 V
6.1
2.6
3.3
Single
0.54
D
SOT-223
G
S
N-Channel MOSFET
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performace due to
an enlarged tab for heatsinking. Power dissipation of greater
than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
SOT-223
IRLL110PbF
SiHLL110-E3
IRLL110
SiHLL110
SOT-223
IRLL110TRPbFa
SiHLL110T-E3a
IRLL110TRa
SiHLL110Ta
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
VDS
VGS
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, RG = 25 Ω, IAS = 1.5 A (see fig. 12).
c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
100
± 10
1.5
0.93
12
0.025
0.017
50
1.5
0.31
3.1
2.0
5.5
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91320
S-81366-Rev. A, 07-Jul-08
www.vishay.com
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