IRL2505S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.008
VGS = 10V, ID = 54A
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.010 Ω VGS = 5.0V, ID = 54A
––– ––– 0.013
VGS = 4.0V, ID = 45A
VGS(th)
Gate Threshold Voltage
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
59 ––– ––– S VDS = 25V, ID = 54A
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µ A VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
Qg
Total Gate Charge
––– ––– 130
ID = 54A
Qgs
Gate-to-Source Charge
––– ––– 25 nC VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 67
VGS = 5.0V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 28V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 160 –––
––– 43 –––
ns ID = 54A
RG = 1.3Ω, VGS = 5.0V
tf
Fall Time
––– 84 –––
RD = 0.50Ω, See Fig. 10
LS
Internal Source Inductance
––– 7.5 –––
Between lead,
nH and center of die contact
Ciss
Input Capacitance
––– 5000 –––
VGS = 0V
Coss
Output Capacitance
––– 1100 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 390 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
MOSFET symbol
D
––– ––– 104
showing the
A
integral reverse
G
––– ––– 360
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– ––– 1.3 V TJ = 25°C, IS = 54A, VGS = 0V
––– 140 210 ns TJ = 25°C, IF = 54A
––– 650 970 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 240µH
RG = 25Ω, IAS = 54A. (See Figure 12)
ISD ≤ 54A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL2505 data and test conditions
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.