OptiMOSTMPower-Transistor,60V
IPD025N06N
Diagram13:Avalanchecharacteristics
102
100 °C
25 °C
125 °C
101
Diagram14:Typ.gatecharge
12
10
8
6
12 V
30 V
48 V
4
2
100
100
101
102
tAV[µs]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
0
103
0 10 20 30 40 50 60 70 80
Qgate[nC]
VGS=f(Qgate);ID=90Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
66
Gate charge waveforms
64
62
60
58
56
54
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.5,2014-07-23