IC61LV12816-12T View Datasheet(PDF) - Integrated Circuit Solution Inc

Part Name

Description

Manufacturer

IC61LV12816-12T

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

Integrated Circuit Solution Inc 

IC61LV12816

WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)

Symbol Parameter

tWC Write Cycle Time

tSCE CE to Write End

tAW Address Setup Time

to Write End

tHA Address Hold from Write End

tSA Address Setup Time

tPWB LB, UB Valid to End of Write

tPWE(4) WE Pulse Width

tSD Data Setup to Write End

tHD Data Hold from Write End

tHZWE(2) WE LOW to High-Z Output

tLZWE(2) WE HIGH to Low-Z Output

-8

Min. Max.

8—

7—

7—

0—

0—

7—

7—

4.5 —

0—

—3

0—

-10

Min. Max.

10 —

8—

8—

0—

0—

8—

8—

5—

0—

—4

0—

-12

Min. Max.

12 —

8—

8—

0—

0—

9—

9—

6—

0—

—5

0—

-15

Min. Max. Unit

15 — ns

10 — ns

10 — ns

0 — ns

0 — ns

10 — ns

10 — ns

7 — ns

0 — ns

— 6 ns

0 — ns

Notes:

1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V

and output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to

initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the

rising or falling edge of the signal that terminates the write.

4.Tested with OE Hith.

8

Integrated Circuit Solution, Inc.

AHSR024-0B 04/23/2004

Share Link: