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FQP13N50 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQP13N50
Fairchild
Fairchild Semiconductor Fairchild
FQP13N50 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Typical Characteristics
VGS
Top : 15 V
10 V
8.0 V
7.0 V
6.5 V
101
6.0 V
Bottom : 5.5 V
100
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.4
1.2
V = 10V
1.0
GS
0.8
V = 20V
GS
0.6
0.4
0.2
Note : T = 25
J
0.0
0
10
20
30
40
50
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss
C
oss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
101
150
100
10-1
2
25
-55
Notes :
1.
2.
2V5D0S μ=
50V
s Pulse
Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 100V
DS
10
VDS = 250V
V = 400V
DS
8
6
4
2
Note : ID = 13.4 A
0
0
5 10 15 20 25 30 35 40 45 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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