FQPF13N50 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQPF13N50 Datasheet PDF : 10 Pages
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FQP13N50 / FQPF13N50
N-Channel QFET MOSFET
500 V, 12.5 A, 430 mΩ
March 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
• 12.5 A, 500 V, RDS(on) = 430 mΩ (Max) @VGS = 10 V,
ID = 6.25 A
• Low Gate Charge (Typ. 45 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP13N50 FQPF13N50
500
12.5
12.5 *
7.9
7.9 *
50
50 *
± 30
810
12.5
17
4.5
170
56
1.35
0.45
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
FQP13N50
0.74
0.5
FQPF13N50
2.23
--
Unit
°C/W
°C/W
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
www.fairchildsemi.com
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