FQD17N08 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQD17N08 Datasheet PDF : 9 Pages
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Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
101
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
※ Note :
1. 250μs Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.4
0.3
V = 10V
GS
V = 20V
GS
0.2
0.1
※ Note : T = 25℃
J
0.0
0
10
20
30
40
50
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
900
750
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
C
※ Notes :
450
iss
1. VGS = 0 V
C
2. f = 1 MHz
oss
300
Crss
150
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
150℃
100 25℃
10-1
2
-55℃
※ Notes :
1. VDS = 30V
2. 250μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Note :
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
VDS = 64V
8
6
4
2
※ Note : ID = 16.5A
0
0
2
4
6
8
10
12
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, January 2001
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