FQD20N06 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

FQD20N06

N-Channel QFET® MOSFET

Fairchild Semiconductor 

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol

Parameter



Off Characteristics

Test Conditions

Min Typ Max

BVDSS Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

60

--

--

BVDSS Breakdown Voltage Temperature

/ TJ Coefficient

ID = 250 A, Referenced to 25°C -- 0.07

--

IDSS

Zero Gate Voltage Drain Current

VDS = 60 V, VGS = 0 V

VDS = 48 V, TC = 125°C

--

--

1

--

--

10

IGSSF

Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V

--

--

100

IGSSR

Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V

--

--

-100



On Characteristics

VGS(th)

RDS(on)

Gate Threshold Voltage

Static Drain-Source

On-Resistance

VDS = VGS, ID = 250 A

VGS = 10 V, ID = 8.4 A

2.0 --

4.0

--

--

0.050 0.063

gFS

Forward Transconductance



Dynamic Characteristics

VDS = 25 V, ID = 8.4 A

--

10

--

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance



Switching Characteristics

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 450 590

-- 170 220

--

25

35

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 30 V, ID = 10 A,

RG = 25 

--

5

20

--

45

100

--

20

50

(Note 4)

--

25

60

VDS = 48 V, ID = 20 A,

-- 11.5 15

VGS = 10 V

--

3

--

(Note 4)

--

4.5

--

Unit

V

V/°C

A

A

nA

nA

V



S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

ISM

Maximum Pulsed Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 16.8 A

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0 V, IF = 20 A,

dIF / dt = 100 A/s

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 640H, IAS = 16.8A, VDD = 25V, RG = 25 Starting TJ = 25°C

3. ISD ≤ 20A, di/dt ≤ 300A/s, VDD ≤ BVDSS, Starting TJ = 25°C

4. Essentially independent of operating temperature

--

--

16.8

A

--

--

67.2

A

--

--

1.5

V

--

43

--

ns

--

50

--

nC

©2001 Fairchild Semiconductor Corporation

2

FQD20N06 Rev. C0

www.fairchildsemi.com

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