FQD20N06TM View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQD20N06TM Datasheet PDF : 8 Pages
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April 2013
FQD20N06
N-Channel QFET® MOSFET
60 V, 16.8 A, 63 m
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
D
G
S
D-PAK
Features
• 16.8 A, 60 V, RDS(on) = 63 m (Max) @ VGS = 10V,
ID = 8.4 A
• Low Gate Charge (Typ.11.5 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD20N06
60
16.8
10.6
67.2
25
155
16.8
3.8
7.0
2.5
38
0.30
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RJC
RJA
RJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient, Max.
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
1
FQD20N06 Rev. C0
FQD20N06
3.28
50
110
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
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