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KM44H16030BC-FY View Datasheet(PDF) - Samsung

Part Name
Description
Manufacturer
KM44H16030BC-FY
Samsung
Samsung Samsung
KM44H16030BC-FY Datasheet PDF : 49 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
128Mb DDR SDRAM
Target
DDR SDRAM ORDERING INFORMATION
KM 4 XX L XX X X X X X - X X
1. SAMSUNG Memory
2. Device
3. Organization
4. Product & Voltage(VDD)
5. Depth
6. Refresh
12. Speed
11. Power
10. Package Type
9. Revision
8. Interface & Voltage(VDDQ)
7. Number of Bank
1. SAMSUNG Memory
2. Device
•4
DRAM
3. Organization
•4
x4
•8
x8
• 16
x16
• 32
x32
7. Number of Bank
•3
4 Banks
•4
8 Banks
8. Interface & Voltage(VDDQ)
•0
Mixed Interface(LVTTL & SSTL_3 & 3.3V VDDQ)
•1
SSTL_2(2.5V VDDQ)
4. Product & Voltage(VDD)
9. Revision
•H
DDR SDRAM(3.3V VDD) • Blank
1st Gen.
•L
DDR SDRAM(2.5V VDD) • A
2nd Gen.
5. Depth
•4
4M
•8
8M
•B
3rd Gen.
•C
4th Gen.
• 16
16M
10. Package Type
• 32
32M
•T
66pin TSOP-II
• 64
64M
•B
BGA
• 12
128M
•C
u - BGA(CSP)
• 25
• 51
• 1G
• 2G
256M
512M
1G
2G
11. Power
•G
•F
Auto & Self Refresh
Auto & Self Refresh with Low Power
• 4G
6. Refresh
•0
4G
64m/4K(15.6us)
12. Speed
•Z
•Y
7.5ns, 133MHz@CL2 (266Mbps/pin)
7.5ns, 133MHz@CL2.5(266Mbps/pin)
•1
32m/2K(15.6us)
•0
10ns, 100MHz @CL2(200Mbps/pin)
•2
128m/8K(15.6us)
•3
64m/8K(7.8us)
•4
128m/16K(7.8us)
- 8 of 63 -
REV. 0.61 August 9. '99
 

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