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CAT28F512G-90T View Datasheet(PDF) - Catalyst Semiconductor => Onsemi

Part NameDescriptionManufacturer
CAT28F512G-90T 512K-Bit CMOS Flash Memory Catalyst
Catalyst Semiconductor => Onsemi Catalyst
CAT28F512G-90T Datasheet PDF : 15 Pages
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CAT28F512
WRITE OPERATIONS
The following operations are initiated by observing the
sequence specified in the Write Command Table.
Read Mode
The device can be put into a standard READ mode by
initiating a write cycle with 00H on the data bus. The
subsequent read cycles will be performed similar to a
standard EPROM or EEPROM Read.
Signature Mode
An alternative method for reading device signature (see
Read Operations Signature Mode), is initiated by writing
the code 90H into the command register while keeping
VPP high. A read cycle from address 0000H with CE and
OE low (and WE high) will output the device signature.
CATALYST Code = 00110001 (31H)
A Read cycle from address 0001H retrieves the binary
code for the device on outputs I/O0 to I/O7.
28F512 Code = 1011 1000 (B8H)
Erase Mode
During the first Write cycle, the command 20H is written
into the command register. In order to commence the
erase operation, the identical command of 20H has to be
written again into the register. This two-step process
ensures against accidental erasure of the memory con-
tents. The final erase cycle will be stopped at the rising
edge of WE, at which time the Erase Verify command
(A0H) is sent to the command register. During this cycle,
the address to be verified is sent to the address bus and
latched when WE goes low. An integrated stop timer
allows for automatic timing control over this operation,
eliminating the need for a maximum erase timing speci-
fication. Refer to AC Characteristics (Program/Erase)
for specific timing parameters.
Figure 4. A.C. Timing for Erase Operation
VCC POWER-UP SETUP ERASE
& STANDBY
COMMAND
ERASE
COMMAND
ERASING ERASE VERIFY
COMMAND
ERASE VCC POWER-DOWN/
VERIFICATION
STANDBY
ADDRESSES
tWC
tWC
tWC
tAS
tAH
CE (E)
tCS
tCH
tCH
tCH
tCS
OE (G)
tGHWL
tWPH
tWHWH2
tWHGL
WE (W)
DATA (I/O)
tWP
tWP
tDH
tDH
tDS
tDS
HIGH-Z
DATA IN
DATA IN
= 20H
= 20H
VCC 5.0V
0V
VPP VPPH
VPPL
tVPEL
tWP
tDS
tDH
DATA IN
= A0H
tOE
tOLZ
tLZ
tCE
tRC
tEHQZ
tDF
tOH
VALID
DATA OUT
9
Doc. No. 1084, Rev. H
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