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CAT28F512TA-15T View Datasheet(PDF) - Catalyst Semiconductor => Onsemi

Part NameDescriptionManufacturer
CAT28F512TA-15T 512K-Bit CMOS Flash Memory Catalyst
Catalyst Semiconductor => Onsemi Catalyst
CAT28F512TA-15T Datasheet PDF : 15 Pages
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CAT28F512
SUPPLY CHARACTERISTICS
Symbol
Parameter
VCC
VCC Supply Voltage
VPPL
VPP During Read Operations
VPPH
VPP During Read/Erase/Program
A.C. CHARACTERISTICS, Read Operation
VCC = +5V ±10%, unless otherwise specified.
Limits
Min
Max.
Unit
4.5
5.5
V
0
6.5
V
11.4
12.6
V
JEDEC Standard
Symbol Symbol
Parameter
tAVAV
tRC
Read Cycle Time
tELQV
tCE
CE Access Time
tAVQV
tACC Address Access Time
tGLQV
tOE
OE Access Time
tAXQX
tOH
Output Hold from Address OE/CE Change
tGLQX
tOLZ(1)(6) OE to Output in Low-Z
tELQX
tLZ(1)(6) CE to Output in Low-Z
tGHQZ
tDF(1)(2) OE High to Output High-Z
tEHQZ
tDF(1)(2) CE High to Output High-Z
tWHGL(1) -
Write Recovery Time Before Read
28F512-90 28F512-12 28F512-15
Min. Max. Min. Max. Min. Max. Unit
90
120
150
ns
90
120
150 ns
90
120
150 ns
35
50
55 ns
0
0
0
ns
0
0
0
ns
0
0
0
ns
20
30
35 ns
30
40
45 ns
6
6
6
µs
Figure 1. A.C. Testing Input/Output Waveform(3)(4)(5)
2.4 V
0.45 V
INPUT PULSE LEVELS
2.0 V
0.8 V
REFERENCE POINTS
Figure 2. A.C. Testing Load Circuit (example)
1.3V
1N914
3.3K
DEVICE
UNDER
TEST
OUT
CL = 100 pF
CL INCLUDES JIG CAPACITANCE
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer.
(3) Input Rise and Fall Times (10% to 90%) < 10 ns.
(4) Input Pulse Levels = 0.45V and 2.4V.
(5) Input and Output Timing Reference = 0.8V and 2.0V.
(6) Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid.
5
Doc. No. 1084, Rev. H
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