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BY251GP-E3/73 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
BY251GP-E3/73
Vishay
Vishay Semiconductors Vishay
BY251GP-E3/73 Datasheet PDF : 4 Pages
1 2 3 4
www.DataSheet.co.kr
BY251GP thru BY255GP
Vishay General Semiconductor
Glass Passivated Junction Plastic Rectifier
SUPERECTIFIER®
DO-201AD
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
200 V to 1300 V
IFSM
100 A
IR
5.0 μA
VF
1.1 V
TJ max.
175 °C
FEATURES
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current, IR less than 0.1 μA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for both
consumer and automotive applications.
MECHANICAL DATA
Case: DO-201AD, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BY251GP BY252GP BY253GP BY254GP BY255GP UNIT
Maximum non repetitive peak reverse voltage
VRSM
220
440
660
880
1430
V
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1300
V
Maximum RMS voltage
VRMS
140
280
420
560
910
V
Maximum DC blocking voltage
VDC
200
400
600
800
1300
V
Maximum average forward rectified current 10 mm lead
length at TA = 55 °C
IF(AV)
3.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Maximum full load reverse current, full cycle average
10 mm lead length at TA = 55 °C
IR(AV)
100
μA
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Document Number: 88541 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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