BDW24 View Datasheet(PDF) - Bourns, Inc

Part Name

Description

Manufacturer

BDW24

PNP SILICON POWER DARLINGTONS

Bourns, Inc 

BDW24, BDW24A, BDW24B, BDW24C

PNP SILICON POWER DARLINGTONS

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN TYP MAX

Collector-emitter

V(BR)CEO breakdown voltage

ICEO

Collector-emitter

cut-off current

ICBO

Collector cut-off

current

Emitter cut-off

IEBO current

Forward current

hFE

transfer ratio

VCE(sat)

VBE(sat)

VBE(on)

VEC

Collector-emitter

saturation voltage

Base-emitter

saturation voltage

Base-emitter

voltage

Parallel diode

forward voltage

IC = -100 mA IB = 0

VCE = -30 V

VCE = -30 V

VCE = -40 V

VCE = -50 V

VCB = -45 V

VCB = -60 V

VCB = -80 V

VCB = -100 V

VEB = -5 V

VCE = -3 V

VCE = -3 V

VCE = -3 V

IB = -8 mA

IB = -60 mA

IB = -8 mA

VCE = -3 V

VCE = -3 V

IE = -2 A

IB = 0

IB = 0

IB = 0

IB = 0

IE = 0

IE = 0

IE = 0

IE = 0

IC = 0

IC = -1 A

IC = -2 A

IC = -6 A

IC = -2 A

IC = -6 A

IC = -2 A

IC = -1 A

IC = -6 A

IB = 0

(see Note 3)

BDW24

BDW24A

BDW24B

BDW24C

BDW24

BDW24A

BDW24B

BDW24C

BDW24

BDW24A

BDW24B

BDW24C

-45

-60

-80

-100

(see Notes 3 and 4)

(see Notes 3 and 4)

(see Notes 3 and 4)

(see Notes 3 and 4)

1000

750

100

-0.5

-0.5

-0.5

-0.5

-0.2

-0.2

-0.2

-0.2

-2

20000

-2

-3

-2.5

-2.5

-3

-1.8

NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

UNIT

V

mA

mA

mA

V

V

V

V

thermal characteristics

RθJC

RθJA

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

MIN TYP MAX UNIT

2.5 °C/W

62.5 °C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS †

ton Turn-on time

toff

Turn-off time

IC = -3 A

VBE(off) = 4.5 V

IB(on) = -12 mA

RL = 10 Ω

IB(off) = 12 mA

tp = 20 µs, dc ≤ 2%

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

MIN TYP MAX UNIT

1

µs

5

µs

PRODUCT INFORMATION

2

MAY 1989 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

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