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BUZ111S View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
BUZ111S
Infineon
Infineon Technologies Infineon
BUZ111S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 111S
Typ. output characteristics
ID = f (VDS)
parameter: tp = 80 µs
BUZ111S
190 Ptot = 30l 0W
A
kj i h g f
160
140
120
100
VGS [V]
a
4.0
b
4.5
ec
5.0
d
5.5
e
6.0
f
6.5
dg
7.0
h
7.5
80
i
8.0
j
9.0
60
ck
10.0
l
20.0
40
b
20
a
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. transfer characteristics ID= f (VGS)
parameter: tp = 80 µs
VDS ≥ 2 x ID x RDS(on) max
80
A
60
50
40
30
20
10
00
1
2
3
4
V
6
VGS
Typ. drain-source-on-resistance
RDS(on) = f (ID)
parameter: VGS
BUZ111S
0.026
Ω
b
c
d
e
0.022
0.020
0.018
0.016
0.014
0.012
f
0.010
g
0.008
h
i
jk
0.006
l
0.004 VGS [V] =
0.002
bc def
4.5 5.0 5.5 6.0 6.5
ghi j kl
7.0 7.5 8.0 9.0 10.0 20.0
0.000
0
20 40 60 80 100 120 A 150
ID
Typ. forward transconductance
gfs = f(ID); Tj = 25ËšC
parameter: gfs
75
S
60
55
50
45
40
35
30
25
20
15
10
5
00
10 20 30 40 50 A 65
ID
Data Sheet
6
05.99
 

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