BLW76 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BLW76 Datasheet PDF : 15 Pages
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Philips Semiconductors
HF/VHF power transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
VBE = 0; IC = 50 mA
Collector-emitter breakdown voltage
open base; IC = 50 mA
Emitter-base breakdown voltage
open collector; IE = 10 mA
Collector cut-off current
VBE = 0; VCE = 35 V
D.C. current gain(1)
IC = 4 A; VCE = 5 V
D.C. current grain ratio of matched devices(1)
IC = 4 A; VCE = 5 V
Collector-emitter saturation voltage(1)
IC = 12,5 A; IB = 2,5 A
Transition frequency at f = 100 MHz(2)
−IE = 4 A; VCB = 28 V
−IE = 12,5 A; VCB = 28 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 28 V
Feedback capacitance at f = 1 MHz
IC = 50 mA; VCE = 28 V
Collector-flange capacitance
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
V(BR) CES
V(BR) CEO
V(BR)EBO
ICES
hFE
hFE1/hFE2
VCEsat
fT
fT
Cc
Cre
Ccf
10
handbook, halfpage
IC
(A)
1 Th = 70 °C
25 °C
Product specification
BLW76
>
70 V
>
35 V
>
4V
<
10 mA
15 to 80
<
1,2
typ.
2,5 V
typ.
315 MHz
typ.
305 MHz
typ.
125 pF
typ.
85 pF
typ.
3 pF
MGP501
10−1
Fig.4 Typical values; VCE = 20 V.
August 1986
10−2
0.5
1
1.5 VBE (V) 2
4
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