BLW76 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BLW76 Datasheet PDF : 15 Pages
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Philips Semiconductors
HF/VHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f > 1 MHz
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Storage temperature
Operating junction temperature
VCESM
VCEO
VEBO
IC(AV)
ICM
Prf
Tstg
Tj
Product specification
BLW76
max.
70 V
max.
35 V
max.
4V
max.
8A
max.
20 A
max. 140 W
−65 to + 150 °C
max. 200 °C
10
handbook, halfpage
IC
(A)
MGP499
Th = 70 °C
Tmb = 25 °C
1
1
10
VCE (V)
102
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 60 W; Tmb = 82 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
200
handbook, halfpage
Prf
ΙΙΙ
(W)
150
ΙΙ
100
derate by 0.77 W/K
MGP500
Ι
50
derate by 0.56 W/K
0
0
50
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3 R.F. power dissipation; VCE ≤ 28 V; f > 1 MHz.
Rth j-mb(dc)
=
1,92 K/W
Rth j-mb(rf)
= 1,33 K/W
Rth mb-h
=
0,2 K/W
August 1986
3
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