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AM29LV116BT-90EC View Datasheet(PDF) - Advanced Micro Devices

Part NameDescriptionManufacturer
AM29LV116BT-90EC 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory AMD
Advanced Micro Devices AMD
AM29LV116BT-90EC Datasheet PDF : 40 Pages
First Prev 31 32 33 34 35 36 37 38 39 40
PRELIMINARY
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time (Note 3)
Typ (Note 1)
0.7
25
9
18
Max (Note 2)
15
300
54
Unit
Comments
s
Excludes 00h programming
s
prior to erasure (Note 4)
µs
Excludes system level
s
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four- or two-bus-cycle sequence for the program command. See
Table 9 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles per sector.
LATCHUP CHARACTERISTICS
Description
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
Input voltage with respect to VSS on all I/O pins
VCC Current
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
Min
–1.0 V
–1.0 V
–100 mA
Max
12.5 V
VCC + 1.0 V
+100 mA
TSOP PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN
COUT
CIN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Test Setup
VIN = 0
VOUT = 0
VIN = 0
Typ Max Unit
6
7.5
pF
8.5
12
pF
7.5
9
pF
DATA RETENTION
Parameter
Minimum Pattern Data Retention Time
Test Conditions
Min
150°C
10
125°C
20
Unit
Years
Years
Am29LV116B
38
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