81N34-J-AB3-E-R View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
81N34-J-AB3-E-R Datasheet PDF : 15 Pages
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81CXXX/81NXXX
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (2.0V ~ 2.9V)
PARAMETER
SYMBOL CIRCUIT TEST CONDITIONS
Detect Voltage
VDF
1
Hysteresis Range
VHYS
1
Operating Voltage
VIN
1 VDF=1.6V ~ 6.0V
Supply Current
ISS
2
VIN=2.0V
VIN=5.0V
Output Current
N-ch
3
VDS=0.5V, VIN =2.0V
IOUT
P-ch
4 VDS=2.1V, VIN=8.0V
(CMOS output)
VDF
∆VDF
Temperature Characteristics ∆TOPR×VDF
Transient Delay Time
(VDR VOUT inversion)
tDLY *
5 VIN changes from
0.6V ~ 10V
Detection voltage (3.0V ~ 3.9V)
PARAMETER
SYMBOL CIRCUIT TEST CONDITIONS
Detect Voltage
VDF
1
Hysteresis Range
VHYS
1
Operating Voltage
VIN
1 VDF=1.6V ~ 6.0V
Supply Current
ISS
2
VIN =3.0V
VIN =5.0V
Output Current
N-ch
3
VDS=0.5V, VIN =3.0V
IOUT
P-ch
4 VDS=2.1V, VIN=8.0V
(CMOS output)
VDF
∆VDF
Temperature Characteristics ∆TOPR×VDF
Transient Delay Time
(VDR VOUT inversion)
tDLY *
5 VIN changes from
0.6V ~ 10V
MIN
VDF (T)
X0.98
VDF
X0.02
0.7
TYP MAX
VDF (T)
VDF (T)
X1.02
VDF
VDF
X0.05 X0.08
10.0
1.0 3.0
2.0 4.2
UNIT
V
V
V
µA
µA
7.9
mA
-15.4
mA
±100
ppm/℃
50
200 ms
MIN
VDF (T)
X0.98
VDF
X0.02
0.7
TYP MAX
VDF (T)
VDF (T)
X1.02
VDF
VDF
X0.05 X0.08
10.0
1.3 3.4
2.0 4.2
UNIT
V
V
V
µA
µA
10.1
mA
-15.4
mA
±100
ppm/℃
50
200 ms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 15
QW-R502-039,I
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