2SC3356WQ View Datasheet(PDF) - Galaxy Semi-Conductor
Part Name
Description
Manufacturer
2SC3356WQ Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC3356W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0
20
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
12
V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
3
V
Collector cut-off current
ICBO
VCB=10V,IE=0
0.1 μA
Emitter cut-off current
IEBO
DC current gain
hFE
Transition frequency
fT
Noise figure
F
CLASSIFICATION OF hFE(1)
Rank
Q
Range
50-100
Marking
R23
VEB=1V,IC=0
0.1 μA
VCE=10V,IC=20mA
50
300
VCE=10V, IC= 20mA
VCE=10V,IC=7mA,f=1GHz
6
2
GHz
dB
R
80-160
R24
S
125-250
R25
Document number: BL/SSSTF001
Rev.A
www.galaxycn.com
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