2N4003K-TR8 View Datasheet(PDF) - Weitron Technology
Part Name
Description
Manufacturer
2N4003K-TR8 Datasheet PDF : 6 Pages
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2N4003K
N-Channel Enhancement
3 DRAIN
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE *
Features:
* Low Gate Voltage Threshold Vgs(th)
* Gate
Pretection
Diode
to Facilitate Drive Circuit Design.
* Low Gate Charge for Fast Switching.
* ESD Protected Gate.
* Minimum Breakdown Voltage Rating of 30V.
SOURCE 2
Application:
* Level Shifters
* Level Switches
* Low Side Load Switches
* Portable Applications
DRAIN CURRENT
0.5 AMPERES
DRAIN SOUCE VOLTAGE
30 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current1 ,Steady State
Power Dissipation1
,Steady State
Continuous Drain Current1 ,t<10s
Power Dissipation1
,t<5s
(TA=25°C)
(TA=85°C)
(TA=25°C)
(TA=85°C)
Pulsed Drain Current
VDS
30
V
VGS
±20
0.5
ID
A
0.37
PD
0.69
W
0.56
ID
A
0.40
PD
0.83
W
IDM
1.7
A
Maximum Junction-ambient
Operating Junction Temperature Range
Storage Temperature Range
,Steady State1
,t<10s1
,Steady State2
180
RθJA
150
°C /W
300
TJ
+150
°C
Tstg
-55~+150
°C
Source Current (Body Diode)
IS
1.0
A
Lead Temperature for Soldering Purposes (1/8” from case 10s)
TL
260
°C
Note: 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Device Marking
2N4003K = TR8
WEITRON
http://www.weitron.com.tw
1/6
08-Sep-09
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