BDX35 View Datasheet(PDF) - SavantIC Semiconductor
Part Name
Description
Manufacturer
BDX35 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX35
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A
VCEsat-2 Collector-emitter saturation voltage IC=7A; IB=0.7A
VBEsat-1 Base-emitter saturation voltage
IC=5A; IB=0.5A
VBEsat-2 Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=7A; IB=0.7A
VCB=80V; IE=0
Tj=100
VEB=5V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=10V
CC
Collector capacitance
IE=0;VCB=10V ;f=1MHz
fT
Transition frequency
IC=0.5A; VCE=5V ;f=100MHz
Switching times
ton
Turn-on time
toff
turn-off time
ICon=1A;IBon=-IBoff=0.1A
ICon=2A;IBon=-IBoff=0.2A
ICon=5A;IBon=-IBoff=0.5A
ICon=1A;IBon=-IBoff=0.1A
ICon=2A;IBon=-IBoff=0.2A
ICon=5A;IBon=-IBoff=0.5A
MIN TYP. MAX UNIT
0.9
V
1.2
V
1.7
V
2.0
V
0.1
10
µA
0.1
µA
45
450
40
pF
100
MHz
60 100
80
ns
180 300
600 800
450 700 ns
350 500
2
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