1N4448 View Datasheet(PDF) - Rectron Semiconductor

Part Name

Description

Manufacturer

1N4448

1N4448 SIGNAL DIODE

Rectron Semiconductor 

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

SILICON PLANAR ZENER DIODE

1N4448

FEATURES

* Fast Switching Device(TRR<4.0nS)

* DO-35 Package (JEDEC)

* Through-Hole Device Type Mounting

* Hermetically Sealed Glass

* Compression Bonded Construction

* All external surfaces are corrosion resistant and leads

are readily solderable

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.

MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )

RATINGS

Peak Reverse Voltage

Maximum DC Blocking Voltage

Maximum Forward Continuous Current

SYMBOL

Vrm

VDc

IFM

Maximum Average Forward Rectified Current

Non-Repetitive Peak Forward Surge Current

Typical Reverse Recovery Time(IF=IR=30mA,Irr=0.1XIR,RL=100Ω)

Typical Junction Capacitance(VR=0V,f=1MHz)

Maximum Power Dissipation

Operating and Storage Temperature Range

IO

IFSM

Trr

CT

PD

TJ,TSTG

ELECTRICAL CHARACTERISTICS (@TA=25 OC unless otherwise noted)

CHARACTERISTICS

Maximum Instantaneous Forward Voltage

Maximum Instantaneous Reverse Current

@IF=5mA

@IF=100mA

@VR=20V

@VR=75V

SYMBOL

VF

IR

DO-35

1.02 (26.0)

MIN.

.022 (0.56)

.018 (0.46)

DIA.

.165 (4.2)

MAX.

1.02 (26.0)

MIN.

.079 (2.0)

DIA.

MAX.

Dimensions in inches and (millimeters)

1N4448

100

70

100

150

1

4

4

500

-65 to + 200

1N4448

0.72

1.0

25

5

UNITS

Volts

Volts

mAmps

mAmps

Amps

nS

pF

mW

OC

UNITS

Volts

nAmps

uAmps

2012-9

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