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FS6130-03 View Datasheet(PDF) - AMI Semiconductor

Part Name
Description
Manufacturer
FS6130-03
AMI
AMI Semiconductor AMI
FS6130-03 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
AMERICAN MICROSYSTEMS, INC.
FS6130
VCXO Clock Generator IC
May 2000
Preliminary
Table 6: DC Electrical Specifications (VDD = 5V nominal)
Unless otherwise stated, VDD = 5.0V ± 10%, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization
data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are ± 3σ f rom typical. Negative currents indicate current flows out of the device.
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
MIN.
TYP. MAX. UNITS
Overall
Supply Current, Dynamic, with Loaded
Outputs
IDD
fXTAL = 27MHz; CL = 10pF, VDD = 5.0V
mA
Crystal Oscillator
Crystal Loading Capacitance
CL(xtal)
As seen by a crystal connected to XIN and
XOUT
17
pF
Crystal Drive Level
RXTAL=20;
200
uW
Crystal Oscillator Feedback (XIN)
Threshold Bias Voltage
VTH
mV
High-Level Input Current
IIH
µA
Low-Level Input Current
IIL
µA
Crystal Oscillator Drive (XOUT)
High-Level Output Source Current
IOH
V(XIN) = 5V, VO = 0V
mA
Low-Level Output Sink Current
IOL
V(XIN) = 0V, VO = 5V
mA
Clock Outputs (CLKx)
High-Level Output Source Current *
IOH
VO = 2.0V
mA
Low-Level Output Sink Current *
IOL
VO = 0.4V
mA
Output Impedance *
zOH
VO = 0.1VDD; output driving high
zOL
VO = 0.1VDD; output driving low
Short Circuit Source Current *
IOSH
VO = 0V; shorted for 30s, max.
mA
Short Circuit Sink Current *
IOSL
VO = 5V; shorted for 30s, max.
mA
5
ISO9001
5.1.00
 

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